Nanoscale characterization of compound semiconductors using laser-pulsed atom probe tomography
نویسندگان
چکیده
منابع مشابه
Assessing the Composition of Wide Bandgap Compound Semiconductors by Atom Probe Tomography: A Metrological Problem
1. Groupe de Physique des Matériaux, UMR 6634 CNRS, University and INSA of Rouen, Normandie University, 76800 St. Etienne du Rouvray, France 2. Institute of Physics (IPhys), Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015, Lausanne, Switzerland 3. Laboratoire de Photonique et Nanostructures CNRS, Université Paris-Saclay, 91460 Marcoussis, France. 4. Institut d’Electronique Fondamentale...
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ژورنال
عنوان ژورنال: Journal of Physics: Conference Series
سال: 2010
ISSN: 1742-6596
DOI: 10.1088/1742-6596/209/1/012026